to ? 92 1. emitter 2. col lecto r 3. base jiangsu changjiang electron ics technology co., l td to-92 plastic-encap sulate t ransistors TSC1417 transistor (npn) features z gener al purpose switch ing and amplification. maximum ratings (t a =25 unless otherwis e noted) electrical characteristics (t a =25 unless otherwis e specified) parameter symbol test conditions min typ max unit collector -b ase breakdown voltage v (br)cbo i c = 0.1ma,i e =0 20 v collector -emitter b reakdown voltage v (br)ceo i c =1ma,i b =0 15 v emitter-bas e breakdown voltage v (br) ebo i e =0.1ma,i c =0 3 v collector cu t-off current i cbo v cb =10v,i e =0 1 a emitter cut-off current i ebo v eb =2v, i c =0 1 a dc curren t g ain h fe v ce =6v, i c =1ma 29 270 collector -emitter satu ration voltage v ce(sat ) i c =10ma,i b =1ma 0.5 v base-emitte r satu ration voltage v be (sat) i c =10ma,i b =1ma 1.42 v tra n sition frequency f t v ce =6v,i c =1ma 300 mhz classification of h fe ran k d e f g h i j rang e 29-45 39-60 54-80 72-108 97-146 132-198 180-270 symbol parameter v alue unit v cbo collector-base v oltage 20 v v ceo coll ector-emitter vo lt age 15 v v ebo emitter-base volt ag e 3 v i c collector curre n t 30 ma p c coll ector pow e r dissipation 625 mw r ja thermal resistance f r om junction to ambient 200 / w t j junction t e mperature 150 t stg s torage t e mperature -55~+150 www.cj-elec.com 1 c , dec,2015
min max min m ax a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4. 300 4.700 0.169 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 symbol dimensions in millimeters dimensions in inches 1.270 typ 0.050 typ to-92 package outline dimensions to-92 suggested pad lay out www.cj-elec.com , dec ,2015
to-92 7 d s h d q g 5 h h o z z z f m h o h f f r p 3 c,dec,2015
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